High accuracy and cost-effective
Contact type can measure any materials within 0.2 µm (2 σ at 20℃ ±1℃).
No abrasion is made on the wafer.
The wafer floats positions while measurement points change and it does not damage even thin wafers.
Even a wafer with warpage can be measured.
Best for the process control of compound wafers and oxide wafers.
(SiC, GaN, LT, Sapphire and Bonded Wafers)
Measured data management.
This system performs statistical calculations and stores data to USB memory.